Properties of Al2O3 optical coatings on GaAs produced by oxidation of epitaxial AlAs/GaAs films
- 30 May 1994
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (22) , 2976-2978
- https://doi.org/10.1063/1.111376
Abstract
Auger analysis of oxidized AlAs epitaxial layers grown by molecular‐beam epitaxy reveals that the composition of the films is stoichiometric Al2O3. High optical quality of the films is demonstrated by optical reflection and transmission measurements. A reflectivity of 6% is measured for an antireflection coating on GaAs. Leakage currents in the nA range and resistivities ≳5×1011 Ω cm are deduced from current‐voltage measurements. Capacitance‐voltage measurements on metal‐oxide‐semiconductor structures using the Al2O3 films obtained by oxidizing AlAs, reveal a significant reduction of the interface state density as compared to conventional, electron beam evaporated Al2O3.Keywords
This publication has 4 references indexed in Scilit:
- Lattice disorder, facet heating and catastrophic optical mirror damage of AlGaAs quantum well lasersApplied Physics Letters, 1993
- Thermodynamics of facet damage in cleaved AlGaAs lasersApplied Physics Letters, 1991
- Catastrophic damage of AlxGa1−xAs double-heterostructure laser materialJournal of Applied Physics, 1979
- Multidielectrics for GaAs MIS devices using composition-graded AlxGa1−xAs and oxidized AlAsApplied Physics Letters, 1979