Multidielectrics for GaAs MIS devices using composition-graded AlxGa1âxAs and oxidized AlAs
- 15 March 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 34  (6) , 408-410
- https://doi.org/10.1063/1.90815
Abstract
Metalâinsulatorâsemiconductor (MIS) structures were prepared by dry thermal oxidation of an AlAs layer that had been grown on a compositionâgraded AlxGa1âxAs layer on GaAs. The epitaxial layers were grown by molecular beam epitaxy. Capacitanceâvoltage (CâV) measurements of these MIS structures demonstrated the achievement of inversion behavior with essentially no hysteresis and flatband voltages ranging from 0 to 0.1 V, which correspond to a fixed interface charge density of less than 2Ă1010 cmâ2. It was also found that the stress developed between the oxide film and the epilayer was reduced in these MIS structures.Keywords
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