Use of oxygen-doped AlxGa1−xAs for the insulating layer in MIS structures
- 15 May 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 32 (10) , 678-679
- https://doi.org/10.1063/1.89853
Abstract
Metal‐insulator‐semiconductor capacitors were prepared by doping an Al0.5Ga0.5As layer with oxygen in order to demonstrate a lattice‐matched single‐crystal insulator‐semiconductor heterojunction. Crystal growth was by molecular‐beam epitaxy. Interface trap effects were not observed in capacitance‐voltage measurements, while the current‐voltage measurements show space‐charge‐limited currents for forward and reverse biases.Keywords
This publication has 8 references indexed in Scilit:
- Electrical properties of anodic and pyrolytic dielectrics on gallium arsenideJournal of Vacuum Science and Technology, 1977
- Low-noise and high-power GaAs microwave field-effect transistors prepared by molecular beam epitaxyJournal of Applied Physics, 1977
- A GaAs/SixOyNz MIS FETJournal of Applied Physics, 1976
- Depletion-mode GaAs MOS FETApplied Physics Letters, 1976
- First anodic-oxide GaAs m.o.s.f.e.t.s based on easy technological processesElectronics Letters, 1976
- Frequency dependence of C and ΔV/Δ(C−2) of Schottky barriers containing deep impuritiesSolid-State Electronics, 1973
- A feedback method for investigating carrier distributions in semiconductorsIEEE Transactions on Electron Devices, 1972
- Preparation and characterization of high resistivity GaAsJournal of Physics and Chemistry of Solids, 1962