A GaAs/SixOyNz MIS FET
- 1 December 1976
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 47 (12) , 5474-5475
- https://doi.org/10.1063/1.322542
Abstract
GaAs MIS field effect transistors (FET) have been fabricated using silicon oxynitride (SixOyNz) as the gate insulator. These devices display very little hysteresis and exhibit effective mobilities in excess of 2000 cm2/V sec. This paper reports on both the characteristics of the dielectrics used and on the resulting devices.This publication has 10 references indexed in Scilit:
- InP/SiO2 MIS structureJournal of Applied Physics, 1976
- Depletion-mode GaAs MOS FETApplied Physics Letters, 1976
- First anodic-oxide GaAs m.o.s.f.e.t.s based on easy technological processesElectronics Letters, 1976
- GaAs surface chemistry – a reviewC R C Critical Reviews in Solid State Sciences, 1975
- Electrolytic etching and electron mobility of GaAs for FET'sSolid-State Electronics, 1974
- The GaAs inversion-type MIS transistorsSolid-State Electronics, 1974
- N-Channel gallium arsenide MISFETPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1973
- Properties of Si[sub x]O[sub y]N[sub z] Films on SiJournal of the Electrochemical Society, 1968
- A 200 MHz, 300 ° gallium arsenide MIS transistorPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1967
- Gallium arsenide MOS transistorsSolid-State Electronics, 1965