A dechanneling investigation of MeV oxygen implanted silicon
- 1 June 1991
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 58 (2) , 236-241
- https://doi.org/10.1016/0168-583x(91)95594-4
Abstract
No abstract availableKeywords
This publication has 24 references indexed in Scilit:
- Planar Dechannelling of Energetic Ions at Dislocations. I. Dependence of Dechannellling Cross-Section on Density of DislocationsJapanese Journal of Applied Physics, 1982
- Depth profiling of extended defects in silicon by Rutherford backscattering measurementsPhysica Status Solidi (a), 1981
- Ion-induced defects in semiconductorsNuclear Instruments and Methods, 1981
- Dechannelling of Energetic Charged Particles at Dislocations in An-Ag Solid SolutionJapanese Journal of Applied Physics, 1980
- Energy dependence of dechanneling by a dislocation loopPhysical Review B, 1978
- Dechanneling measurements of defect depth profiles and effective cross-channel distribution of misaligned atoms in ion-irradiated goldNuclear Instruments and Methods, 1976
- Plural and multiple scattering of low‐energy heavy particles in solidsPhysica Status Solidi (b), 1971
- Analysis of disorder distributions in boron implanted siliconRadiation Effects, 1970
- Dechannelling Cylinder of DislocationsPhysica Status Solidi (b), 1968
- Spectral Emissivity of SiliconJapanese Journal of Applied Physics, 1967