Depth profiling of extended defects in silicon by Rutherford backscattering measurements
- 16 September 1981
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 67 (1) , 129-139
- https://doi.org/10.1002/pssa.2210670112
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Quantitative depth distribution of dislocations by planar channelingPhysics Letters A, 1978
- Dechanneling by dislocations in ion-implanted AlPhysical Review B, 1978
- Channeling analysis of stacking defects in epitaxial Si layersNuclear Instruments and Methods, 1978
- IonenimplantationPublished by Springer Nature ,1978
- Energy Dependence of Channeling Analysis in Implantation Damaged AlPublished by Springer Nature ,1976
- Dechanneling by stacking faults and dislocationsRadiation Effects, 1972
- Dechannelling of fast ions at dislocationsPhysica Status Solidi (a), 1970
- Étude de défauts cristallins par canalisationAnnales de Physique, 1970
- Defect studies in crystals by means of channelingCanadian Journal of Physics, 1968
- Dechannelling Cylinder of DislocationsPhysica Status Solidi (b), 1968