Polysilicon transistors on glass by pulsed-laser annealing
- 1 May 1982
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (5) , 3897-3899
- https://doi.org/10.1063/1.331094
Abstract
Amorphous silicon thin films deposited on glass substrates were crystallized by pulsed-laser annealing. A grain size up to 2000 Å was observed. Transistors were made, and electrical measurements showed that the field-effect mobility was in the range 15–20 cm2/V s, instead of 10−2−10−3 cm2/V s in the unannealed regions.This publication has 15 references indexed in Scilit:
- Laser-induced crystallization of silicon islands on amorphous substrates: Multilayer structuresApplied Physics Letters, 1981
- MOSFETs in laser-recrystallized poly-silicon on quartzIEEE Electron Device Letters, 1980
- Laser annealing of glow discharge amorphous siliconJournal of Non-Crystalline Solids, 1980
- A monolithic integrated circuit fabricated in laser-annealed polysiliconIEEE Transactions on Electron Devices, 1980
- Polycrystalline silicon by glow discharge techniqueApplied Physics Letters, 1979
- A device for laser beam diffusion and homogenisationJournal of Physics E: Scientific Instruments, 1979
- Thin film MOSFET’s fabricated in laser-annealed polycrystalline siliconApplied Physics Letters, 1979
- Optical properties and structure of amorphous silicon films prepared by CVDSolar Energy Materials, 1979
- Substrate and doping effects upon laser-induced epitaxy of amorphous siliconJournal of Applied Physics, 1979
- Epitaxial growth of deposited amorphous layer by laser annealingApplied Physics Letters, 1978