Polycrystalline silicon by glow discharge technique
- 1 November 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 35 (9) , 686-687
- https://doi.org/10.1063/1.91254
Abstract
Polycrystalline silicon was obtained by glow discharge decomposition of silane on heated amorphous substrates. The influence of substrate temperature on crystalline structure and electrical conductivity of silicon films was investigated. Textured polycrystalline films were obtained above 450 °C.Keywords
This publication has 9 references indexed in Scilit:
- Passivation of grain boundaries in polycrystalline siliconApplied Physics Letters, 1979
- Hydrogenation of evaporated amorphous silicon films by plasma treatmentApplied Physics Letters, 1978
- Plasma preparations of amorphous silicon filmsThin Solid Films, 1978
- Hydrogenation and dehydrogenation of amorphous and crystalline siliconApplied Physics Letters, 1978
- The electrical properties of polycrystalline silicon filmsJournal of Applied Physics, 1975
- Substitutional doping of amorphous siliconSolid State Communications, 1975
- A 6 × 6-in 20-lpi electroluminescent display panelIEEE Transactions on Electron Devices, 1975
- Growth and Characterization of Polycrystalline SiliconJournal of the Electrochemical Society, 1973
- Hall Mobility in Chemically Deposited Polycrystalline SiliconJournal of Applied Physics, 1971