The excess noise in buried-channel MOS transistors
- 1 November 1987
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 2 (11) , 732-735
- https://doi.org/10.1088/0268-1242/2/11/005
Abstract
A definitive experiment is described on the excess noise in a buried-channel MOS transistor. The specimen was biased with a uniform, Ohmic, channel. With the surface enhanced 1/f noise is produced. With the surface depleted or inverted the noise drops by more than two orders of magnitude and takes on the character of the 1/f noise observed in JFETs. Also seen is a large generation-recombination noise peak involving the fast surface states. The implications for excess noise theory and device design are discussed.Keywords
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