Direct Observation of Lattice Arrangement in MBE Grown GaAs–AlGaAs Superlattices
- 1 June 1983
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 22 (6A) , L367-369
- https://doi.org/10.1143/jjap.22.l367
Abstract
Observation is made of a cross section including the growth direction of an MBE grown GaAs–Al0.28Ga0.72As superlattice structure by a transmission electron microscope with a resolution of 1.4 Å. Relevant atoms are observed to be regularly aligned even across the heterointerface. There is no alloy clustering observed in the ternary alloy layer. Dislocation is clearly observed as a local disorder in lattice alignment for the first time in the MBE grown layer.Keywords
This publication has 3 references indexed in Scilit:
- Alloy Clustering in-GaAs Quantum-Well HeterostructuresPhysical Review Letters, 1980
- Crystal growth kinetics in (GaAs)n−(AlAs)m superlattices deposited by molecular beam epitaxyJournal of Crystal Growth, 1978
- OBSERVATIONS OF {111} ATOMIC PLANES IN SILICONApplied Physics Letters, 1968