Electron mobility in Alx Ga1−x As
- 16 October 1974
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 25 (2) , K145-K147
- https://doi.org/10.1002/pssa.2210250258
Abstract
No abstract availableThis publication has 15 references indexed in Scilit:
- Quantitative Bestimmung der Zusammensetzung von Ga1−xAlxAs‐Epitaxieschichten mit der Elektronenstrahl‐Mikroanalyse (ESMA)Crystal Research and Technology, 1974
- Electrical properties of n-type AlxGa1–xAs single crystalsPhysica Status Solidi (a), 1973
- Disorder scattering in solid solutions of III–V semiconducting compoundsJournal of Physics and Chemistry of Solids, 1973
- The liquid phase epitaxy of AlxGa1-xAs for monolithic planar structuresProceedings of the IEEE, 1971
- Least Squares Analysis of Hall Data and Donor Levels in Gallium PhosphideJapanese Journal of Applied Physics, 1969
- High-Field Transport in- Type GaAsPhysical Review B, 1968
- Preparation and Properties of AlAs-GaAs Mixed CrystalsJournal of the Electrochemical Society, 1966
- Mobility and thermoelectric power in many-valley polar semiconductorsJournal of Physics and Chemistry of Solids, 1962
- Screening effects in polar semiconductorsJournal of Physics and Chemistry of Solids, 1959
- Theory of the Electrical Properties of Germanium and SiliconPublished by Elsevier ,1955