Ionization of impurities in silicon
- 31 December 1986
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 29 (12) , 1223-1227
- https://doi.org/10.1016/0038-1101(86)90127-9
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Measurements of the p-n product in heavily doped epitaxial emittersIEEE Transactions on Electron Devices, 1984
- Comparison of band-gap shrinkage observed in luminescence from n+-Si with that from transport and optical absorption measurementsApplied Physics Letters, 1983
- Resistivity‐Dopant Density Relationship for Boron‐Doped SiliconJournal of the Electrochemical Society, 1980
- Resistivity‐Dopant Density Relationship for Phosphorus‐Doped SiliconJournal of the Electrochemical Society, 1980
- On the deionization of impurities as an explanation for excess intrinsic carrier density in heavily doped siliconIEEE Transactions on Electron Devices, 1980
- The dopant density and temperature dependence of hole mobility and resistivity in boron doped siliconSolid-State Electronics, 1978
- The dopant density and temperature dependence of electron mobility and resistivity in n-type siliconSolid-State Electronics, 1977
- Variation of impurity−to−band activation energies with impurity densityJournal of Applied Physics, 1975
- Calculation of Fermi Energy and Bandtail Parameters in Heavily Doped and Degenerate n-Type GaAsJournal of Applied Physics, 1970
- Electrical Properties of Pure Silicon and Silicon Alloys Containing Boron and PhosphorusPhysical Review B, 1949