The dopant density and temperature dependence of hole mobility and resistivity in boron doped silicon
- 30 September 1978
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 21 (9) , 1109-1117
- https://doi.org/10.1016/0038-1101(78)90345-3
Abstract
No abstract availableKeywords
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