Formation of single and double self-organized InAs quantum dot by selective area metal-organic vapor phase epitaxy
- 26 June 2000
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 76 (26) , 3947-3949
- https://doi.org/10.1063/1.126830
Abstract
Position- and number-controlled InAs self-organized quantum dots (SOQDs) were formed by selective-area-metal-organic chemical vapor phase epitaxy on the partially SiNx patterned GaAs (001) substrate. The mask layer was patterned along the [110] direction, and somewhat wider rectangular openings were also attached to the line. As a result of GaAs SA growth, a pyramidal shaped structure was formed on the rectangular region of the pattern. The top area of the pyramidal structure is a very narrow hexagonal-shaped (001) facet which is surrounded by two-{111}B and four-{124} facets. The SOQD was preferentially formed on the top (001) facet because the growth rate on the (001) facet is far much higher than on the surrounding sidewalls. It is found that the number of SOQDs formed is strongly dependent on the width of the top (001)-facet so that control of single, double, and multiple SOQD(s) is possible.Keywords
This publication has 12 references indexed in Scilit:
- Fabrication and electrical characterization of planar resonant tunneling devices incorporating InAs self-assembled quantum dotsApplied Physics Letters, 1999
- Spatially Selective Formation of InAs Self-organized Quantum Dots on Patterned GaAs (100) SubstratesJapanese Journal of Applied Physics, 1999
- Selective formation of one- and two-dimensional arrayed InGaAs quantum dots using Ga2O3 thin film as a mask materialApplied Physics Letters, 1998
- Selective formation and alignment of InAs quantum dots over mesa stripes along the [011] and [001] directions on GaAs (100) substratesApplied Physics Letters, 1998
- InAs quantum dot formation on GaAs pyramids by selective area MOVPEPhysica E: Low-dimensional Systems and Nanostructures, 1998
- Laser stimulated selective area growth of quantum dotsApplied Physics Letters, 1998
- Selective growth of self-organizing InAs quantum dots on strained InGaAs surfacesApplied Surface Science, 1998
- Fabrication of strained InAs island ensembles on nonplanar patterned GaAs(001) substratesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1998
- Excited states and energy relaxation in stacked InAs/GaAs quantum dotsPhysical Review B, 1998
- Photoluminescence of Single InAs Quantum Dots Obtained by Self-Organized Growth on GaAsPhysical Review Letters, 1994