A new polymer insulated gate field-effect transistor
- 1 September 1980
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 51 (9) , 5055-5057
- https://doi.org/10.1063/1.328356
Abstract
This paper describes the fabrication of a plasma‐polymerized siloxane insulated‐gate field‐effect transistor which permits the study of the polymer‐silicon interface. Preliminary results are reported on both fixed surface charge density (1.7×1012 cm−2) and hole mobility (500 cm2/V sec) in a P‐channel metal‐insulated semiconductor field‐effect transistor.This publication has 5 references indexed in Scilit:
- Growth of polymer films on compound semiconductors and dry etching processJournal of Applied Physics, 1979
- Microelectronic applications of plasma-polymerized filmsThin Solid Films, 1978
- Gas discharge in hexamethyldisiloxaneJournal of Applied Polymer Science, 1976
- Electrical properties of metal-polymer (polysiloxane)-silicon structures and application of polysiloxane to the passivation of semiconductor devicesThin Solid Films, 1976
- Electrical properties of metal-polymer (polysterene) silicon devicesJournal of Applied Physics, 1974