Effects of Electron Irradiation on Photo-luminescence Spectra of Si-Doped Melt-Grown n-GaAs
- 1 May 1971
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 10 (5)
- https://doi.org/10.1143/jjap.10.656
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Electrical Studies of Low-Temperature Neutron- and Electron-Irradiated Epitaxial n-Type GaAsJournal of Applied Physics, 1969
- Luminescence in Silicon-Doped GaAs Grown by Liquid-Phase EpitaxyJournal of Applied Physics, 1968
- Photoluminescence of Silicon-Compensated Gallium ArsenideJournal of Applied Physics, 1966
- Annealing and Arsenic Overpressure Experiments on Defects in Gallium ArsenideJournal of Applied Physics, 1966