Three-dimensional modelling of horizontal chemical vapor deposition
- 1 March 1990
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 100 (3) , 545-576
- https://doi.org/10.1016/0022-0248(90)90256-k
Abstract
No abstract availableKeywords
This publication has 22 references indexed in Scilit:
- Transport phenomena and chemical reaction issues in OMVPE of compound semiconductorsJournal of Crystal Growth, 1989
- On the 2D modelling of horizontal CVD reactors and its limitationsJournal of Crystal Growth, 1988
- Three‐Dimensional Flow Effects in Silicon CVD in Horizontal ReactorsJournal of the Electrochemical Society, 1988
- Micro-reaction engineering applications of reaction engineering to processing of electronic and photonic materialsChemical Engineering Science, 1987
- Complex flow phenomena in MOCVD reactorsJournal of Crystal Growth, 1986
- A Mathematical Model of Silicon Chemical Vapor Deposition: Further Refinements and the Effects of Thermal DiffusionJournal of the Electrochemical Society, 1986
- Chemical Vapor Deposition: A Chemical Engineering PerspectiveReviews in Chemical Engineering, 1985
- Thermal Diffusion Effects in Chemical Vapor Deposition ReactorsJournal of the Electrochemical Society, 1984
- A Mathematical Model of the Coupled Fluid Mechanics and Chemical Kinetics in a Chemical Vapor Deposition ReactorJournal of the Electrochemical Society, 1984
- Gas Flow Patterns in Horizontal Epitaxial Reactor Cells Observed by Interference HolographyJournal of the Electrochemical Society, 1982