Spectroscopic line fitting to DLTS data
- 30 November 1981
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 24 (11) , 1009-1013
- https://doi.org/10.1016/0038-1101(81)90128-3
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Effect of electric field on deep-level transients in GaAs and GaPApplied Physics Letters, 1980
- Determination of the free energy level of deep centers, with application to GaAsApplied Physics Letters, 1980
- Electron and hole capture cross-sections at deep centers in gallium arsenideRevue de Physique Appliquée, 1979
- Strongly anisotropic field ionization of a common deep level in GaAsJournal de Physique Lettres, 1979
- Photocapacitance quenching effect for “oxygen” in GaAsSolid State Communications, 1978
- Trap depth and electron capture cross section determination by trap refilling experiments in Schottky diodesApplied Physics Letters, 1978
- Study of the main electron trap inalloysPhysical Review B, 1977
- Outdiffusion of deep electron traps in epitaxial GaAsApplied Physics A, 1976
- Deep-level transient spectroscopy: A new method to characterize traps in semiconductorsJournal of Applied Physics, 1974
- Schottky-barrier capacitance measurements for deep level impurity determinationSolid-State Electronics, 1973