Determination of the free energy level of deep centers, with application to GaAs
- 15 August 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 37 (4) , 413-415
- https://doi.org/10.1063/1.91926
Abstract
A method is presented which allows the determination of the free energy level of deep centers by transient capacitance techniques. Preliminary results concerning deep centers in GaAs (E3, EL2, and chromium) are given.Keywords
This publication has 12 references indexed in Scilit:
- Electrical properties of platinum in siliconJournal of Applied Physics, 1979
- Deep-level traps and the conduction-band structure of InPApplied Physics Letters, 1978
- Trap depth and electron capture cross section determination by trap refilling experiments in Schottky diodesApplied Physics Letters, 1978
- Electron traps in bulk and epitaxial GaAs crystalsElectronics Letters, 1977
- Nonradiative capture and recombination by multiphonon emission in GaAs and GaPPhysical Review B, 1977
- Temperature dependence of ionization energies of deep bound states in semiconductorsJournal de Physique Lettres, 1977
- Entropy of ionization and temperature variation of ionization levels of defects in semiconductorsPhysical Review B, 1976
- Deep-level transient spectroscopy: A new method to characterize traps in semiconductorsJournal of Applied Physics, 1974
- Schottky-barrier capacitance measurements for deep level impurity determinationSolid-State Electronics, 1973
- A NEW METHOD FOR DETERMINATION OF DEEP-LEVEL IMPURITY CENTERS IN SEMICONDUCTORSApplied Physics Letters, 1970