Evolution of capture cross-section of radiation-induced interface traps in MOSFETs as studied by a rapid charge pumping technique

This publication has 9 references indexed in Scilit:

• A charge pumping method for rapid determination of interface-trap parameters in metal-oxide-semiconductor devices
  Review of Scientific Instruments, 1992
• Latent thermally activated interface-trap generation in MOS devices
  IEEE Electron Device Letters, 1992
• Effects of switched gate bias on radiation-induced interface trap formation (MOS transistors)
  IEEE Transactions on Nuclear Science, 1991
• Time evolution of capture cross sections of radiation-induced Si/SiO2 interface traps studied by single-frequency ac conductance technique
  Journal of Applied Physics, 1991
• Interface trap transformation in radiation or hot-electron damaged MOS structures
  Semiconductor Science and Technology, 1989
• Interface-trap transformation at radiation-damaged (111)Si/SiO2 interface
  Applied Physics Letters, 1989
• Theory of thePbcenter at the Si/SiO2interface
  Physical Review B, 1987
• A reliable approach to charge-pumping measurements in MOS transistors
  IEEE Transactions on Electron Devices, 1984
• A Framework for Understanding Radiation-Induced Interface States in SiO2 MOS Structures
  IEEE Transactions on Nuclear Science, 1980