High quality GaInAs/AlGaInAs/AlInAs heterostructures on Si ion implanted semi-insulating InP substrates for novel high performance optical modulators
- 1 May 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 111 (1-4) , 475-478
- https://doi.org/10.1016/0022-0248(91)91023-4
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Absorption and refraction spectroscopy of a tunable-electron-density quantum-well and reservoir structurePhysical Review B, 1990
- Large refractive index changes in tunable-electron-density InGaAs/InAlAs quantum wellsIEEE Photonics Technology Letters, 1990
- Electrorefraction in GaInAs/InP multiple quantum well heterostructuresElectronics Letters, 1988