Junction depth dependence of breakdown in silicon detector diodes

This publication has 8 references indexed in Scilit:

• Evaluation of double sided, AC-coupled, double metal silicon strip detectors for H1 at HERA
  Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1994
• Analysis and optimal design of semi-insulator passivated high-voltage field plate structures and comparison with dielectric passivated structures
  IEEE Transactions on Electron Devices, 1994
• Guard ring design for high voltage operation of silicon detectors
  Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1993
• Breakdown protection and long-term stabilisation for Si-detectors
  Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1993
• Analytical solutions for the breakdown voltages of punched-through diodes having curved junction boundaries at the edges
  IEEE Transactions on Electron Devices, 1980
• Analytical solutions for the breakdown voltage of abrupt cylindrical and spherical junctions
  Solid-State Electronics, 1976
• Calculation of avalanche breakdown voltages of silicon p-n junctions
  Solid-State Electronics, 1967
• Mobile electric charges on insulating oxides with application to oxide covered silicon p-n junctions
  Surface Science, 1964