Calculation of avalanche breakdown voltages of silicon p-n junctions
- 1 January 1967
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 10 (1) , 39-43
- https://doi.org/10.1016/0038-1101(67)90111-6
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Ionization Rates of Holes and Electrons in SiliconPhysical Review B, 1964
- Charge multiplication in silicon p-n junctionsSolid-State Electronics, 1963
- Distribution Functions and Ionization Rates for Hot Electrons in SemiconductorsPhysical Review B, 1962
- Determination of Avalanche Breakdown in pn JunctionsJournal of Applied Physics, 1959
- Breakdown in Silicon pn Junctions†Journal of Electronics and Control, 1959
- Ionization Rates for Electrons and Holes in SiliconPhysical Review B, 1958
- Ionization Rates for Holes and Electrons in SiliconPhysical Review B, 1957
- Avalanche Breakdown in GermaniumPhysical Review B, 1955