Dechanneling by dislocations and stacking faults in ion-implanted Si
- 1 March 1982
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research
- Vol. 194 (1-3) , 199-204
- https://doi.org/10.1016/0029-554x(82)90515-8
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Quantitative depth distribution of dislocations by planar channelingPhysics Letters A, 1978
- Dechanneling by dislocations in ion-implanted AlPhysical Review B, 1978
- Investigation of dislocations by backscattering spectrometry and transmission electron microscopyNuclear Instruments and Methods, 1978
- Channeling analysis of stacking defects in epitaxial Si layersNuclear Instruments and Methods, 1978
- Dechannelling of Fast Ions in Distorted Crystals. I. DislocationsJournal of the Physics Society Japan, 1976
- Dechanneling by stacking faults and dislocationsRadiation Effects, 1972
- Dechannelling of fast ions at dislocationsPhysica Status Solidi (a), 1970
- Étude de défauts cristallins par canalisationAnnales de Physique, 1970
- Defect studies in crystals by means of channelingCanadian Journal of Physics, 1968
- Dechannelling Cylinder of DislocationsPhysica Status Solidi (b), 1968