Single event gate rupture in commercial power MOSFETs
- 30 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
Several types of power MOSFETs were irradiated with heavy ions to characterize either single event gate rupture (SEGR) or single event burnout (SEB). The implications of the data, showing temperature-dependence and beam angle-dependence for SEGR, are indicated Author(s) Nichols, D.K. Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA Coss, J.R. ; McCarty, K.P.Keywords
This publication has 2 references indexed in Scilit:
- Single-event burnout of power bipolar junction transistorsIEEE Transactions on Nuclear Science, 1991
- Heavy-Ion-Induced, Gate-Rupture in Power MOSFETsIEEE Transactions on Nuclear Science, 1987