Single-event burnout of power bipolar junction transistors
- 1 December 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 38 (6) , 1315-1322
- https://doi.org/10.1109/23.124111
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Features of the triggering mechanism for single event burnout of power MOSFETsIEEE Transactions on Nuclear Science, 1989
- Development of cosmic ray hardened power MOSFET'sIEEE Transactions on Nuclear Science, 1989
- First Nondestructive Measurements of Power MOSFET Single Event Burnout Cross SectionsIEEE Transactions on Nuclear Science, 1987
- Analytical Model for Single Event Burnout of Power MOSFETsIEEE Transactions on Nuclear Science, 1987
- Burnout of Power MOS Transistors with Heavy Ions of Californium-252IEEE Transactions on Nuclear Science, 1986
- High Dose Rate Burnout in Silicon Epitaxial TransistorsIEEE Transactions on Nuclear Science, 1980