First Nondestructive Measurements of Power MOSFET Single Event Burnout Cross Sections
- 1 January 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 34 (6) , 1736-1741
- https://doi.org/10.1109/tns.1987.4337546
Abstract
A new technique to nondestructively measure single event burnout cross sections for N-channel power MOSFETs is presented. Previous measurements of power MOSFET burnout susceptibility have been destructive and thus not conducive to providing statistically meaningful burnout probabilities. The nondestructive technique and data for various device types taken at several accelerators, including the LBL Bevalac, are documented. Several new phenomena are observed.Keywords
This publication has 5 references indexed in Scilit:
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