Burnout of Power MOS Transistors with Heavy Ions of Californium-252
- 1 January 1986
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 33 (6) , 1710-1713
- https://doi.org/10.1109/tns.1986.4334670
Abstract
Experiments have been conducted to determine the burnout susceptibility of power MOSFET devices exposed to heavy ions from a Californium-252 source. This report documents the results of the first single event burnout tests performed on n-channel enhancement mode power MOSFETs. Presented are, the test method, test results, a description of an observed latched current and a discussion of a possible failure mechanism. The test results include the observed dependence upon applied drain to source bias and variation in burnout susceptibility for various manufacturers of power MOSFETs.Keywords
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