Use of CF-252 to Determine Parameters for SEU Rate Calculation
- 1 January 1985
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 32 (6) , 4282-4286
- https://doi.org/10.1109/tns.1985.4334109
Abstract
A Cf-252 irradiation facility for single event testing of microcircuits has been developed. Testing techniques have been refined to include the capability of determining LET thresholds as well as event cross-sections. The capabilities and limitations of Cf-252 in testing to provide parameters for calculation of SEU rate in the heavy ion environment of space are discussed.Keywords
This publication has 5 references indexed in Scilit:
- An Experimental Study of the Effect of Absorbers on the Let of the Fission Particles Emitted by CF-252IEEE Transactions on Nuclear Science, 1985
- Heavy Ion Induced Permanent Damage in MNOS Gate InsulatorsIEEE Transactions on Nuclear Science, 1985
- A Comparison of Heavy Ion Sources Used in Cosmic Ray Simulation Studies of VLSI CircuitsIEEE Transactions on Nuclear Science, 1984
- Cosmic Ray Simulation Experiments for the Study of Single Event Upsets and Latch-Up in CMOS MemoriesIEEE Transactions on Nuclear Science, 1983
- Suggested Single Event Upset Figure of MeritIEEE Transactions on Nuclear Science, 1983