Features of the triggering mechanism for single event burnout of power MOSFETs
- 1 December 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 36 (6) , 2260-2266
- https://doi.org/10.1109/23.45433
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Analytical Model for Single Event Burnout of Power MOSFETsIEEE Transactions on Nuclear Science, 1987
- Burnout of Power MOS Transistors with Heavy Ions of Californium-252IEEE Transactions on Nuclear Science, 1986
- Second breakdown—A comprehensive reviewProceedings of the IEEE, 1967