Development of cosmic ray hardened power MOSFET's
- 1 December 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 36 (6) , 2375-2382
- https://doi.org/10.1109/23.45451
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Modeling of radiation induced burnout in DMOS transistorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Heavy-Ion-Induced, Gate-Rupture in Power MOSFETsIEEE Transactions on Nuclear Science, 1987
- First Nondestructive Measurements of Power MOSFET Single Event Burnout Cross SectionsIEEE Transactions on Nuclear Science, 1987
- Burnout of Power MOS Transistors with Heavy Ions of Californium-252IEEE Transactions on Nuclear Science, 1986
- Suggested Single Event Upset Figure of MeritIEEE Transactions on Nuclear Science, 1983