Modeling of radiation induced burnout in DMOS transistors
- 6 January 2003
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 508-511
- https://doi.org/10.1109/iedm.1988.32866
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Radiation effects on power integrated circuitsIEEE Transactions on Nuclear Science, 1988
- Transient Hardened Power FETSIEEE Transactions on Nuclear Science, 1986
- Current Induced Avalanche in Epitaxial StructuresIEEE Transactions on Nuclear Science, 1985
- An Investigation into Radiation Induced Second Breakdown in N Channel Power MOSFETsIEEE Transactions on Nuclear Science, 1984