An Investigation into Radiation Induced Second Breakdown in N Channel Power MOSFETs
- 1 January 1984
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 31 (6) , 1508-1512
- https://doi.org/10.1109/TNS.1984.4333539
Abstract
The second breakdown phenomenon in an N channel power mosfet, induced by transient gamma irradiation, is demonstrated in a commercial device. A specially developed radiation hard power mosfet (Mullard Ltd) is shown to be much less susceptible.Keywords
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