Edge dislocation energy level in silicon
- 16 November 1978
- journal article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 50 (1) , K123-K126
- https://doi.org/10.1002/pssa.2210500172
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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- Comment on "Electronic effects on dislocation velocities in heavily doped silicon" by J. R. Patel, L. R. Testardi, and P. E. FreelandPhysical Review B, 1977
- Capacitance measurements as a new tool to investigate the electronic states of dislocations in semiconductorsPhysica Status Solidi (a), 1976
- Electronic effects on dislocation velocities in heavily doped siliconPhysical Review B, 1976
- The electrical properties of dislocations in silicon—ISolid-State Electronics, 1969
- Electrical Properties of Dislocations in Ge and SiPhysica Status Solidi (b), 1969