Energy level and photoionization cross section of gap states in a-Si:H
- 1 December 1987
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 97-98, 75-78
- https://doi.org/10.1016/0022-3093(87)90017-2
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
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- Identification of the Dangling-Bond State within the Mobility Gap of-Si: H by Depletion-Width-Modulated ESR SpectroscopyPhysical Review Letters, 1982
- Conduction in non-crystalline systems V. Conductivity, optical absorption and photoconductivity in amorphous semiconductorsPhilosophical Magazine, 1970
- Random phase model of amorphous semiconductors I. Transport and optical propertiesJournal of Non-Crystalline Solids, 1970