Mid-infrared electroluminescence in GaAs/AlGaAs structures
- 17 November 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 71 (20) , 2892-2894
- https://doi.org/10.1063/1.119329
Abstract
Design, growth, and operation of an unipolar light emitting diode based on the material system GaAs/AlGaAs is reported. We present mid-infrared transmission, photocurrent, and electroluminescence measurements on a quantum cascade structure with intersubband transition energies greater than the optical phonon energy. Electroluminescence powers up to a few nanowatts at 6.9 μm have been measured.Keywords
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