Fabrication of 2 x 2 crosspoint switches using a sputtered SiO2 intermixing technique
- 1 March 2000
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 12 (3) , 287-289
- https://doi.org/10.1109/68.826916
Abstract
We report the fabrication of a 2×2 crosspoint switch, which monolithically integrates passive waveguides and electroabsorption modulators on one chip, using the sputtered SiO 2 technique for quantum-well intermixing. The static performance of the modulators has been tested, and a modulation depth of 25 dB has been obtained at a wavelength of 1.55 μm for an applied bias of 2 V.Keywords
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