Monolithic integration via a universal damage enhanced quantum-well intermixing technique
- 1 January 1998
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Selected Topics in Quantum Electronics
- Vol. 4 (4) , 636-646
- https://doi.org/10.1109/2944.720474
Abstract
No abstract availableThis publication has 24 references indexed in Scilit:
- Mirror passivation of InGaAs lasersElectronics Letters, 1997
- Band-gap tuning of InGaAs/InGaAsP/InP laser using high energy ion implantationApplied Physics Letters, 1995
- Optical multi-mode interference devices based on self-imaging: principles and applicationsJournal of Lightwave Technology, 1995
- Far-field behaviour of 980 nm broad area lasersincorporating bandgap widenedextended slab waveguidesElectronics Letters, 1995
- High quality wavelength tuned multiquantum well GaInAs/GaInAsP lasers fabricated using photoabsorption induced disorderingApplied Physics Letters, 1994
- High-Power 780 nm AlGaAs Narrow-Stripe Window Structure Lasers with Window Grown on FacetsJapanese Journal of Applied Physics, 1993
- Langmuir probe measurements of the electron energy distribution function in radio-frequency plasmasJournal of Vacuum Science & Technology A, 1992
- Layer selective disordering by photoabsorption-induced thermal diffusion in InGaAs/InP based multiquantum well structuresElectronics Letters, 1992
- Highly-reliable CW operation of 100 mW GaAlAs buried twin ridge substrate lasers with nonabsorbing mirrorsIEEE Journal of Quantum Electronics, 1989
- Modeling for rf discharge characteristicsJournal of Applied Physics, 1988