Mirror passivation of InGaAs lasers
- 30 January 1997
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 33 (3) , 213-214
- https://doi.org/10.1049/el:19970125
Abstract
The authors report a mirror passivation technique for high power 980 nm lasers. The technique involves depositing a film of gallium oxide on the facet immediately after facet cleaving. Photoluminescence measurements show that the GaAs surface covered with in situ deposited gallium oxide has two orders of magnitude higher luminescence than that for bare GaAs surface. Lasers with good aging characteristics have been fabricated.Keywords
This publication has 5 references indexed in Scilit:
- ZnSe for mirror passivation of high power GaAs basedlasersElectronics Letters, 1996
- High-Power 780 nm AlGaAs Narrow-Stripe Window Structure Lasers with Window Grown on FacetsJapanese Journal of Applied Physics, 1993
- Improvement of catastrophic optical damage level of AlGaInP visible laser diodes by sulfur treatmentApplied Physics Letters, 1991
- Low-noise and high-power operation in high reflectivity coated nonabsorbing mirror GaAlAs lasersJournal of Applied Physics, 1990
- Improvement of high-power characteristics of 780-nm AlGaAs laser diode by (NH4)2S facet treatmentPublished by SPIE-Intl Soc Optical Eng ,1990