Formation of CuInSe2 thin films by rapid thermal recrystallization
- 10 June 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (23) , 2678-2680
- https://doi.org/10.1063/1.104805
Abstract
Polycrystalline thin‐film CuInSe2 has been formed by rapid thermal processing of vacuum codeposited Cu, In, and Se. Films were fabricated and characterized in three composition regions: Cu‐poor (∼20 at. % Cu), stoichiometric (25 at. %), and Cu‐rich (∼28 at. %). Characterization results are presented including x‐ray diffraction analysis, electron probe for microanalysis, scanning electron microscopy, and optical reflection and transmission measurements. Results show that nearly single‐phase material has been formed from codeposited precursors with a post‐deposition annealing time of less than 2 min. The films have optical absorption coefficients in the high 104 cm−1 range with minimum subgap absorption, and an optical band gap of 1.0 eV with smooth morphologies amenable to photovoltaic device fabrication.Keywords
This publication has 6 references indexed in Scilit:
- A comprehensive study on the optical properties of thin-film CuInSe2 as a function of composition and substrate temperatureJournal of Applied Physics, 1989
- Properties and applications of copper indium diselenideCritical Reviews in Solid State and Materials Sciences, 1988
- Compositional and electrical analysis of the multilayers of a CdS/CuInSe2 solar cellJournal of Applied Physics, 1985
- Production of single phase chalcopyrite CuInSe2 by spray pyrolysisApplied Physics Letters, 1984
- Growth of CuInSe2 by molecular beam epitaxyJournal of Applied Physics, 1980
- Electron and X-ray diffraction analyses of ternary compound (I–III–VI2) thin filmsThin Solid Films, 1976