Advanced modeling of silicon oxidation
- 1 February 1998
- journal article
- Published by Elsevier in Microelectronics Reliability
- Vol. 38 (2) , 259-264
- https://doi.org/10.1016/s0026-2714(97)00041-3
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Thermal oxidation of silicon and residual fixed chargeMicroelectronics Journal, 1993
- Silicon Oxidation and Fixed Oxide ChargeJournal of the Electrochemical Society, 1992
- Thermal Oxidation of Silicon in Dry Oxygen Growth‐Rate Enhancement in the Thin Regime: I . Experimental ResultsJournal of the Electrochemical Society, 1985
- Transport Number Measurements in SilicaJournal of the Electrochemical Society, 1985
- On the Oxidation Kinetics of Silicon: The Role of WaterJournal of the Electrochemical Society, 1980
- Thermal Oxidation of Silicon: In Situ Measurement of the Growth Rate Using EllipsometryJournal of the Electrochemical Society, 1975
- Electrical Conduction at Elevated Temperatures in Thermally Grown Silicon Dioxide FilmsJournal of the Electrochemical Society, 1973
- Electrolysis of SiO2 on SiliconThe Journal of Chemical Physics, 1968
- General Relationship for the Thermal Oxidation of SiliconJournal of Applied Physics, 1965
- Effect of an Electric Field on Silicon OxidationThe Journal of Chemical Physics, 1962