Bipolar-FET Combinational Power Transistors for Power Conversion Applications

1 September 1984

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Aerospace and Electronic Systems

Vol. AES-20 (5) , 659-664
https://doi.org/10.1109/TAES.1984.310534

Abstract

Four bipolar-FET (field-effect transistor) combinational transistor configurations are compared from the application point of view. The configurations included are FET-Darlington (cascade), emitter-open switch (cascode), parallel configuration, and FET-gated bipolar transistors (FGT).

Keywords

POWER TRANSISTORS
POWER CONVERSION
FETS
BIPOLAR TRANSISTORS
SEMICONDUCTOR DIODES
SWITCHES
LOW VOLTAGE
BREAKDOWN VOLTAGE
TELECOMMUNICATION SWITCHING
NASA

This publication has 3 references indexed in Scilit:

A comparison between BIMOS device types
IEEE Transactions on Electron Devices, 1986
Turn-Off Characteristics of Power Transistors Using Emitter-Open Turn-Off
IEEE Transactions on Aerospace and Electronic Systems, 1981
The monolithic HV BIPMOS
Published by Institute of Electrical and Electronics Engineers (IEEE) ,1981