InSb1-xBix Films Grown by Molecular Beam Epitaxy
- 1 April 1981
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 20 (4) , L303
- https://doi.org/10.1143/jjap.20.l303
Abstract
InSb1-x Bi x thin films were grown on InSb substrates by molecular beam epitaxy. The band-gaps of the films were confirmed to shift to longer wavelength with the increase of InBi mole fraction in the films by the measurement of p-n junction photovoltaic response.Keywords
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