RHEED Study of InSb Films Grown by Molecular Beam Epitaxy
- 1 July 1980
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 19 (7) , L417-420
- https://doi.org/10.1143/jjap.19.l417
Abstract
The surface structures of InSb films grown on (111)A, (111)B and (001)-oriented InSb substrates by molecular beam epitaxy were investigated in situ with a reflection high-energy electron diffraction technique, and the dependences of the surface reconstructions on the relative arrival rates of Sb and In and the surface temperature are reported. The change in surface structures on the (111)B and (001) faces occurs when the Sb/In ratio is about unity, and the ratio at transition does not depend on the substrate temperature. This behavior is interpreted as meaning that the sticking coefficient of Sb atoms (or molecules) is nearly unity for the Sb/In ratio \cong1.Keywords
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