Simulation of extrinsic bistability of resonant tunneling structures
- 8 August 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (6) , 485-486
- https://doi.org/10.1063/1.99875
Abstract
A simple biasing circuit for measuring current-voltage characteristics of resonant tunneling double-barrier structures exhibits extrinsic bistabilities due to oscillations, which we show through large-signal simulations.Keywords
This publication has 4 references indexed in Scilit:
- Effect of circuit oscillations on the dc current-voltage characteristics of double barrier resonant tunneling structuresApplied Physics Letters, 1988
- Comment on ‘‘Observation of intrinsic bistability in resonant-tunneling structures’’Physical Review Letters, 1987
- Heterojunction double-barrier diodes for logic applicationsApplied Physics Letters, 1987
- Observation of intrinsic bistability in resonant tunneling structuresPhysical Review Letters, 1987