Free Carrier Generation in Semiconductors Induced by Absorption of Subband-Gap Light
- 26 January 1998
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 80 (4) , 821-824
- https://doi.org/10.1103/physrevlett.80.821
Abstract
The mechanisms of electron-hole pair generation in a semiconductor induced by absorption of a subband-gap photon and mediated by a band-gap state are reviewed. The steady-state photocurrent quantum yield and the photocurrent response to harmonic modulation of the light intensity are calculated for each mechanism. It is shown, with a nanoporous GaP photoanode as an example, that the mechanisms can be distinguished by intensity-modulated photocurrent spectroscopy and that characterization of the mediating band-gap states is possible.Keywords
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