Carrier-Concentration-Dependent Mobility in-Type High-Purity Germanium
- 15 April 1973
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 7 (8) , 3725-3731
- https://doi.org/10.1103/physrevb.7.3725
Abstract
The Hall mobility of electrons in high-purity germanium was studied over a range from 7 to 200 °K in a series of samples both before and after irradiation with rays. In several unirradiated samples the mobility was limited mainly by lattice scattering down to 7 °K. The mobility at 35 °K decreased with radiation dose for all samples, but the magnitude of the decrease was greater in samples having lower carrier concentrations . This decrease was well correlated with . Measured mobilities at 35 °K were significantly lower than values calculated from the Brooks-Herring impurity-scattering expression for . At the measured mobility was 0.01 times the calculated mobility. No satisfactory explanation has been found.
Keywords
This publication has 7 references indexed in Scilit:
- Electron Mobility in Ge, Si, and GaPPhysica Status Solidi (b), 1972
- Determination of Compensation Density by Hall and Mobility Analysis in Copper-Doped GermaniumPhysical Review B, 1972
- Electron Transport in InSb, InAs, and InPPhysical Review B, 1971
- Electron Transport in GaAsPhysical Review B, 1971
- Electron Mobility in Direct-Gap Polar SemiconductorsPhysical Review B, 1970
- Properties of Silicon and GermaniumProceedings of the IRE, 1952
- Neutral Impurity Scattering in SemiconductorsPhysical Review B, 1950