High‐power GaN‐based semiconductor lasers
- 1 April 2004
- journal article
- research article
- Published by Wiley in physica status solidi (c)
- Vol. 1 (6) , 1461-1467
- https://doi.org/10.1002/pssc.200304086
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- 100-mW kink-free blue-violet laser diodes with low aspect ratioIEEE Journal of Quantum Electronics, 2003
- High-Power AlGaInN Laser Diodes with High Kink Level and Low Relative Intensity NoiseJapanese Journal of Applied Physics, 2002
- GaN-Based High Power Blue-Violet Laser DiodesJapanese Journal of Applied Physics, 2001
- AlGaInN high-power lasers grown on an ELO-GaN layerJournal of Crystal Growth, 2000
- Performance and degradation of continuous-wave InGaN multiple-quantum-well laser diodes on epitaxially laterally overgrown GaN substratesApplied Physics Letters, 2000
- High-Power and Long-Lifetime InGaN Multi-Quantum-Well Laser Diodes Grown on Low-Dislocation-Density GaN SubstratesJapanese Journal of Applied Physics, 2000
- Optical Disk Recording Using a GaN Blue-Violet Laser DiodeJapanese Journal of Applied Physics, 2000
- Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase EpitaxyJapanese Journal of Applied Physics, 1997
- Accelerated aging for AlGaInP visible laser diodesApplied Physics Letters, 1994
- Optical analysis of multiple-quantum-well lasersApplied Optics, 1979