Improved Intrinsic Gettering Technique for High-Temperature-Treated CZ Silicon Wafers
- 1 January 1981
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 20 (1) , L31-34
- https://doi.org/10.1143/jjap.20.l31
Abstract
An improved intrinsic gettering (IG) technique for silicon wafers subjected to a high temperature of at least 1200°C is developed. It has been shown that multi-step annealing from low to high temperatures successively can enhance the IG effectiveness for high-temperature-annealed wafers. Moreover, this technique produces the IG ability even in a low oxygen wafer, ∼11×1017 cm-3.Keywords
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