High quantum efficiency photoemission from GaAs1−xPx alloys
- 1 April 1977
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 30 (7) , 314-316
- https://doi.org/10.1063/1.89405
Abstract
Photoemission from GaAs1−xPx alloys activated to negative electron affinity has been studied over the band‐gap range 1.4<Eg (eV) x<0.55). Quantum yields up to 50% (electrons/incident photon) have been measured in the visible.Keywords
This publication has 19 references indexed in Scilit:
- High-quantum-efficiency photoemission from an InGaAsP photocathodeApplied Physics Letters, 1976
- Glass−sealed GaAs−AlGaAs transmission photocathodeApplied Physics Letters, 1975
- Photoemission characteristics of transmission-mode negative electron affinity GaAs and (ln,Ga)As vapor-grown structuresIEEE Transactions on Electron Devices, 1974
- The application of semiconductors with negative electron affinity surfaces to electron emission devicesProceedings of the IEEE, 1974
- Calculated energy distributions of electrons emitted from negative electron affinity GaAs: Cs–O surfacesJournal of Applied Physics, 1973
- Photoelectron surface escape probability of (Ga,In)As : Cs–O in the 0.9 to [inverted lazy s] 1.6 μm rangeJournal of Applied Physics, 1972
- LONG-WAVELENGTH PHOTOEMISSION FROM Ga1 − xInxAs ALLOYSApplied Physics Letters, 1971
- GaAs1−xPx AS A NEW HIGH QUANTUM YIELD PHOTOEMISSIVE MATERIAL FOR THE VISIBLE SPECTRUMApplied Physics Letters, 1969
- Transport Properties of GaAs Obtained from Photoemission MeasurementsPhysical Review B, 1969
- Photoemission from GaAs1–xPx, Covered with Low Work Function LayersPhysica Status Solidi (b), 1969